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Samsung Electronics Introduces High-Performance 3nm Chip

South Korean electronics giant, Samsung Electronics, has sanctioned the first shipment of its latest 3-nanometer chip – an advancement that represents a key stage in the race to produce the latest and most efficient chips.

The new generation of 3-nanometer chips is based on the technology known as ‘Gate All Around’ technology, which Samsung says will facilitate a reduction in the area of ​​​​the electronic chip by up to 35 per cent.

The new chip will furthermore improve performance by 30 per cent and reduce energy consumption by 50 per cent compared to the current technology.

The first generation of 3nm chips will achieve a 16 per cent reduction in space, a 23 per cent improvement in performance, and a 45 per cent reduction in power consumption.

Samsung has opened a new chapter in the chip industry with the start of commercial production of 3nm chips, said Kyung Ki-hyun, the CEO of Samsung’s Device Solutions division who oversees the chip sector.

He added that the development of GAA technology is progressing faster than expectations as an alternative to FinFET technology was an innovative breakthrough.

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